1 ELM34403AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 50 c /w parameter symbol limit unit note drain-source voltage vds -55 v gate-source voltage vgs 20 v continuous drain current ta=25c id -4.5 a ta=70c -3.5 pulsed drain current idm -20 a 3 power dissipation ta=25c pd 2.5 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34403AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-55v ? id=-4.5a ? rds(on) < 80m (vgs=-10v) ? rds(on) < 150m (vgs=-4.5v) 4 - pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 single p-channel mosfet s g d
2 ELM34403AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -55 v zero gate voltage drain current idss vds=-44v, vgs= 0v -1 a vds=-36v,vgs= 0v, tj=125c -10 gate-body leakage current igss vds=0v, vgs= 20v 250 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -2.5 v on state drain current id(on) vgs=-10v, vds=-5v -20 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 4.5a 60 80 m 1 vgs =- 4.5v, id =-3.5 a 90 150 m forward transconductance gfs vds =-1 0v, id =-4.5 a 9 s 1 diode forward voltage vsd is =if , vgs=0v -1 v 1 max. body -diode continuous current is -1.3 a pulsed body -diode current ism -2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-30v, f=1mhz 760 pf output capacitance coss 90 pf reverse transfer capacitance crss 40 pf switching parameters total gate charge qg vgs=-10v, vds=-27.5v id=-4.5a 15.0 nc 2 gate-source charge qgs 2.5 nc 2 gate-drain charge qgd 3.0 nc 2 turn - on delay time td(on) vgs=-10v, vds=-20v id -1a , rgen=6 7 14 ns 2 turn - on rise time tr 10 20 ns 2 turn - off delay time td(off) 19 34 ns 2 turn - off fall time tf 12 22 ns 2 body diode reverse recovery time trr if=-3.5a, dl/dt=100a/ s 15.5 ns body diode reverse recovery charge qrr if=-3.5a, dl/dt=100a/ s 7.9 nc ta=25 c single p-channel mosfet 4 - note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%.
3 typical electrical and thermal characteristics ELM34403AA-N single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p8006evg sop-8 lead-free niko-sem 3 sep-30-2004 body diode forward voltage variation with source current and temperature t = 125 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 25 c v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4
4 ELM34403AA-N single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p8006evg sop-8 lead-free niko-sem 4 sep-30-2004
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